Solid-state image pickup device and electronic apparatus

ABSTRACT

The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims the benefit under 35 U.S.C. § 120 as acontinuation application of U.S. application Ser. No. 15/534,621, filedon Jun. 9, 2017, which is a National Stage of International ApplicationNo. PCT/JP2015/084389, filed in the Japanese Patent Office as aReceiving office on Dec. 8, 2015, which claims priority to JapanesePatent Application Number 2015-032578, filed in the Japanese PatentOffice on Feb. 23, 2015 and Japanese Patent Application Number2014-256044, filed in the Japanese Patent Office on Dec. 18, 2014, eachof which is hereby incorporated by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates to a solid-state image pickup device andan electronic apparatus and more particularly to a solid-state imagepickup device and an electronic apparatus that are suitable to be usedin the case where phase-difference detection pixels for realizing animage-surface phase difference AF (Auto Focus) function are arranged.

BACKGROUND ART

Conventionally, an image-surface phase difference AF is known as an AFfunction system employed in an electronic apparatus represented by adigital camera having a photographing function (e.g., see PatentLiterature 1). In a solid-state image pickup device that realizes theimage-surface phase difference AF, normal pixels for obtaining pixelsignals (color signals) that constitutes an image as well asphase-difference detection pixels for pupil splitting of incident lightare arranged at predetermined positions.

In a conventional phase-difference detection pixel, a metallight-shielding film is formed between an on-chip lens and aphotoelectric conversion layer. The metal light-shielding film has anopening shifted with respect to an optical axis (optical center) of theon-chip lens. In addition, a light-shielding structure is providedbetween a pair of phase-difference detection pixels arranged adjacent toeach other. The light-shielding structure is for reducing optical colormixing.

A phase-difference signal is calculated on the basis of outputs of thepair of phase-difference detection pixels having openings at differentpositions (e.g., phase-difference detection pixel opened on left-handside thereof and phase-difference detection pixel opened on right-handside thereof). The calculated phase-difference signal is used forcontrolling focus.

CITATION LIST Patent Literature

Patent Literature 1: Japanese Patent Application Laid-open No.2007-304188

DISCLOSURE OF INVENTION Technical Problem

In the above-mentioned conventional phase-difference detection pixel,the opening is limited by the metal light-shielding film. Therefore, incomparison with a normal pixel, lowering of sensitivity to incidentlight is inevitable. Thus, an adverse effect in practice can occur. Forexample, the image-surface phase difference AF cannot be utilized in thecase of photographing in a dark place.

Further, pixels will be miniaturized along with an increase in thenumber of pixels in the solid-state image pickup device in future. Inthat case, not only reflection of incident light on the metallight-shielding film but also influence of behaviors associated withelectromagnetic waves, such as diffraction, become remarkable. Forexample, lowering of accuracy of phase-difference detection anddeterioration of an image quality characteristic due to mixing ofreflected/diffracted components into adjacent pixels can occur.

In addition, with the phase-difference detection pixel including themetal light-shielding film, an angle range in which a sensitivityresponse to a change in angle of incidence is provided is narrow.Therefore, it is difficult for such a phase-difference detection pixelto be used with a lens having a small f-number, an optical zoom lenswhose CRA (Chief Ray Angle) is largely variable, or the like.

The present disclosure has been made in view of the above-mentionedcircumstances to propose a phase-difference detection pixel capable ofavoiding defects such as lowering of sensitivity to incident light andlowering of phase-difference detection accuracy.

Solution to Problem

A solid-state image pickup device as a first aspect of the presentdisclosure is a solid-state image pickup device in which a normal pixelthat generates a pixel signal of an image and a phase-differencedetection pixel that generates a pixel signal used in calculation of aphase-difference signal for controlling an image-surface phasedifference AF function are arranged in a mixed manner, in which, in thephase-difference detection pixel, a shared on-chip lens for condensingincident light to a photoelectric converter that generates a pixelsignal used in calculation of the phase-difference signal is formed forevery plurality of adjacent phase-difference detection pixels.

In the normal pixel, an individual on-chip lens for condensing incidentlight to a photoelectric converter that generates a pixel signal of theimage can be formed for each normal pixel.

An inter-pixel light-shielding structure can be provided between thenormal pixel and the normal pixel and between the normal pixel and thephase-difference detection pixel.

An inter-pixel light-shielding structure can also be provided betweenthe phase-difference detection pixel and the phase-difference detectionpixel.

The phase-difference detection pixel can include an openinglight-shielding structure that limits an opening of the photoelectricconverter.

In the phase-difference detection pixel, the shared on-chip lens can beformed for every two adjacent pixels.

In the phase-difference detection pixel, two shared on-chip lenses canbe formed for every three adjacent pixels.

A boundary between the individual on-chip lens formed in the normalpixel and the shared on-chip lens formed in the phase-differencedetection pixel can be approximately rectangular or approximatelyhexagonal.

A dummy light-condensing element structure can be formed between theindividual on-chip lens formed in the normal pixel and the sharedon-chip lens formed in the plurality of adjacent phase-differencedetection pixels.

The dummy light-condensing element structure can be formednon-symmetrically with respect to the plurality of phase-differencedetection pixels that share the shared on-chip lens.

The plurality of phase-difference detection pixels that share the sharedon-chip lens can be arranged in a checkerboard pattern.

The phase-difference detection pixel can be linearly arranged in atleast either one of a row direction and a column direction.

The phase-difference detection pixel can be arranged in a stripe patternin at least either one of a row direction and a column direction.

The phase-difference detection pixels arranged in stripes adjacent toeach other in the stripe form can have phases shifted from each other.

A color filter having selective sensitivity to three or more kinds ofdifferent wavelengths can be provided for each pixel, and the pluralityof phase-difference detection pixels that share the shared on-chip lenscan include the color filter having selective sensitivity to a samewavelength.

A color filter having selective sensitivity to three or more kinds ofdifferent wavelengths can be provided for pixel, and the plurality ofphase-difference detection pixels that share the shared on-chip lens caninclude the color filter having selective sensitivity to differentwavelengths.

The phase-difference detection pixel can have a pixel size larger thanthat of the normal pixel.

All pixels including a color filter having selective sensitivity to aparticular wavelength of three or more kinds of different wavelengthscan be the phase-difference detection pixels, and an output of thephase-difference detection pixel can be also used as a pixel signal ofan image.

The phase-difference detection pixel that shares the shared on-chip lenscan have a size that is an integer multiple of that of the normal pixel,the photoelectric converter of the phase-difference detection pixel isdivided into a plurality of regions including a central region fromwhich a same oblique incidence characteristic as a photoelectricconverter of the normal pixel is obtained, and an output of the centralregion can be also used as a pixel signal of an image.

The phase-difference detection pixel that shares the shared on-chip lenscan have a size that is twice as large as that of the normal pixel, thephotoelectric converter of the phase-difference detection pixel isdivided into three regions at approximately 0.5:1:0.5, and an output ofthe region corresponding to 1 of the ratio can be also used as a pixelsignal of an image.

The phase-difference detection pixel that shares the shared on-chip lenscan have a size that is twice as large as that of the normal pixel, thephotoelectric converter of the phase-difference detection pixel isdivided into four regions at approximately 0.5:0.5:0.5:0.5, and anaddition value of outputs of the regions respectively corresponding to0.5 and 0.5 at a center of the ratio can be also used as a pixel signalof an image.

An electronic apparatus as a second aspect of the present disclosure isan electronic apparatus including a solid-state image pickup device inwhich a normal pixel that generates a pixel signal of an image and aphase-difference detection pixel that generates a pixel signal used incalculation of a phase-difference signal for controlling animage-surface phase difference AF function are arranged in a mixedmanner, in which, in the phase-difference detection pixel, a sharedon-chip lens for condensing incident light to a photoelectric converterthat generates a pixel signal used in calculation of thephase-difference signal is formed for every plurality of adjacentphase-difference detection pixels.

Advantageous Effects of Invention

In accordance with the first aspect of the present disclosure, it ispossible to realize a solid-state image pickup device that avoidsdefects such as lowering of the sensitivity to incident light, loweringof the phase-difference detection accuracy, and the like.

In accordance with the second aspect of the present disclosure, it ispossible to realize a highly accurate electronic apparatus having animage-surface phase difference AF function.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 A perspective view showing a configuration example of normalpixels in a solid-state image pickup device to which the presentdisclosure is applied.

FIG. 2 A cross-sectional view corresponding to FIG. 1.

FIG. 3 A perspective view showing a first configuration example of aphase-difference detection pixel in the solid-state image pickup deviceto which the present disclosure is applied.

FIG. 4 A cross-sectional view corresponding to FIG. 3.

FIG. 5 A top view of a shared on-chip lens of FIG. 3.

FIG. 6 A cross-sectional view showing a second configuration example ofthe phase-difference detection pixel in the solid-state image pickupdevice to which the present disclosure is applied.

FIG. 7 A top view of a shared on-chip lens of FIG. 6.

FIG. 8 A cross-sectional view showing a third configuration example ofthe phase-difference detection pixel in the solid-state image pickupdevice to which the present disclosure is applied.

FIG. 9 A top view of a shared on-chip lens of FIG. 8.

FIG. 10 A diagram for describing a relationship between a position of adummy light-condensing element structure in the third configurationexample of the phase-difference detection pixel and an amount ofcorrection of pupil correction.

FIG. 11 A diagram for describing a relationship between positions ofdummy light-condensing element structures in the third configurationexample of the phase-difference detection pixel and an amount ofcorrection of pupil correction.

FIG. 12 A diagram for describing a relationship between a position of adummy light-condensing element structure in the third configurationexample of the phase-difference detection pixel and an amount ofcorrection of pupil correction.

FIG. 13 A cross-sectional view showing a modified example of the thirdconfiguration example of the phase-difference detection pixel.

FIG. 14 A perspective view showing a fourth configuration example of thephase-difference detection pixel in the solid-state image pickup deviceto which the present disclosure is applied.

FIG. 15 A cross-sectional view corresponding to FIG. 14.

FIG. 14 is a top view of a shared on-chip lens.

FIG. 17 A cross-sectional view showing a fifth configuration example ofthe phase-difference detection pixel in the solid-state image pickupdevice to which the present disclosure is applied.

FIG. 17 is a top view of a shared on-chip lens.

FIG. 19 A diagram for describing angle-of-incidence dependency of thedevice sensitivity of the first and fourth configuration examples.

FIG. 20 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 21 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 22 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 23 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 24 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 25 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 26 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 27 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 28 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 29 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 30 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 31 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 32 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 33 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 34 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 35 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 36 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 37 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 38 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 39 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 40 A diagram showing arrangement examples of modified examples ofthe phase-difference detection pixels.

FIG. 41 A diagram describing a problem in the case where outputs of thephase-difference detection pixels are used as color signals.

FIG. 42 A diagram showing the fourth configuration example of thephase-difference detection pixel in the solid-state image pickup deviceto which the present disclosure is applied.

FIG. 43 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 44 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 45 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 46 A diagram showing the fifth configuration example of thephase-difference detection pixel in the solid-state image pickup deviceto which the present disclosure is applied.

FIG. 47 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 48 A diagram showing a sixth configuration example of thephase-difference detection pixel and an arrangement example thereof.

FIG. 49 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 50 A diagram showing a seventh configuration example of thephase-difference detection pixel and an arrangement example thereof.

FIG. 51 A diagram showing a variation of the arrangement ofphase-difference detection pixels.

FIG. 52 A diagram showing a usage example of the solid-state imagepickup device to which the present disclosure is applied.

MODE(S) FOR CARRYING OUT THE INVENTION

Hereinafter, best modes for carrying out the present disclosure(hereinafter, referred to as embodiments) will be described in detailwith reference to the drawings.

<Configuration Example of Normal Pixels in Solid-State Image PickupDevice to which Present Disclosure is Applied>

First of all, although the present disclosure mainly relates tophase-difference detection pixels arranged in a solid-state image pickupdevice, a configuration example of normal pixels arranged together withphase-difference detection pixels in the solid-state image pickup deviceto which the present disclosure is applied will be described for thesake of comparison with the phase-difference detection pixels.

FIG. 1 is a schematic perspective view extracting and showing onlynormal pixels 30 as a range of 4*4 pixels in the solid-state imagepickup device to which the present disclosure is applied. FIG. 2 is aschematic sectional view taken along A-A′ of FIG. 1.

The normal pixels 30 include individual on-chip lenses 31, a colorfilter layer 32, inter-pixel light-shielding structures 33,photoelectric converters 34, and a signal wiring layer 35 in order froman upper surface side (incident surface side).

The individual on-chip lens 31 is formed for each pixel in order tocause incident electromagnetic waves (hereinafter, referred to asincident light) to more efficiently enter the photoelectric converter 34that corresponds to a layer below it. The color filter layer 32 isformed in such a manner that color filters colored in any of R-, G-, andB-colors arranged in accordance with, for example, the Bayer array coverrespective pixels in order to cause part of incident light, which has aparticular wavelength, to pass therethrough toward a layer below it.

The inter-pixel light-shielding structures 33 are made of metal materialor the like in order to reduce optical color mixing between adjacentpixels. The photoelectric converters 34 include photodiodes thatgenerate and accumulate electric charges in a manner that depends onincident light entering them via the individual on-chip lenses 31 andthe color filter layer 32. The signal wiring layer 35 reads out signalelectric charges generated and accumulated by the photoelectricconverters 34 and outputs the read-out signal electric charges to thesubsequent stage.

<First Configuration Example of Phase-Difference Detection Pixel inSolid-State Image Pickup Device to which Present Disclosure is Applied>

Next, a first configuration example of the phase-difference detectionpixel in the solid-state image pickup device to which the presentdisclosure is applied will be described. FIG. 3 is a schematicperspective view extracting and showing a range of 16 (=4*4) pixels inthe solid-state image pickup device to which the present disclosure isapplied. Two pixels of them are phase-difference detection pixels 40 asthe first configuration example. Other 14 pixels are normal pixels 30.FIG. 4 is a schematic sectional view taken along A-A′ of FIG. 3. In thefigure, two pixels at the center are the phase-difference detectionpixels 40. Note that components common among the phase-differencedetection pixels 40 and the normal pixels 30 are denoted by identicalsigns. Therefore, descriptions thereof will be appropriately omitted.The same applies to a second configuration example and the like to bedescribed later.

The phase-difference detection pixels 40 include a shared on-chip lens41, a color filter layer 32, inter-pixel light-shielding structures 33,photoelectric converters 34, and a signal wiring layer 35 in order froman upper surface side (incident surface side).

FIG. 5 shows a top view of the shared on-chip lens 41. As shown in thefigure, the shared on-chip lens 41 is formed to cover the plurality of(in this figure, two) adjacent phase-difference detection pixels 40.That is, the first configuration example shown in FIGS. 3 and 4 has aconfiguration in which the two phase-difference detection pixels 40share the shared on-chip lens 41.

Note that the inter-pixel light-shielding structures 33, which areformed between the normal pixels 30 and between the normal pixel 30 andthe phase-difference detection pixel 40, are not formed between theplurality of phase-difference detection pixels 40 that share the sharedon-chip lens 41. It should be noted that the inter-pixel light-shieldingstructures 33 may be formed between the plurality of phase-differencedetection pixels 40 that share the shared on-chip lens 41.

As shown in the figure, with the solid-state image pickup device inwhich the normal pixels 30 and the phase-difference detection pixels 40are arranged, an increase in resolution and quality of picked-up imagescan be realized by the normal pixels 30. Further, in thephase-difference detection pixels 40, light is not blocked by thelight-shielding structures and a phase difference is detected bylight-condensing power of the shared on-chip lens 41. Thus,phase-difference detection with high sensitivity and good separationratio characteristic becomes possible. In addition, no obstacles thatscatter or diffract light are present in an optical path. Thus, colormixing of adjacent pixels, which can occur due to scattering ordiffraction of light, is suppressed. Therefore, deterioration of theimage quality can also be prevented.

<Second Configuration Example of Phase-Difference Detection Pixel inSolid-State Image Pickup Device to which Present Disclosure is Applied>

Next, a second configuration example of the phase-difference detectionpixel in the solid-state image pickup device to which the presentdisclosure is applied will be described. FIG. 6 is a schematic sectionalview of four adjacent pixels in the solid-state image pickup device towhich the present disclosure is applied. In the figure, two pixels atthe center are phase-difference detection pixels 50 as the secondconfiguration example.

The phase-difference detection pixels 50 as the second configurationexample are obtained by replacing the shared on-chip lens 41 of thephase-difference detection pixels 40 as the first configuration exampleby a shared on-chip lens 51. That is, the second configuration exampleshown in FIG. 6 has a configuration in which the two phase-differencedetection pixels 50 share the shared on-chip lens 51.

FIG. 6 shows a top view of the shared on-chip lens 51 that covers thetwo phase-difference detection pixels 50 and individual on-chip lenses31 of adjacent normal pixels 30.

In the case where the shared on-chip lens 51 is formed using amanufacturing method similar to that of the individual on-chip lenses31, the individual on-chip lenses 31 are tessellated havingsubstantially no gaps between adjacent pixels and the shapes thereof areapproximately rectangular. On the other hand, the shape of the sharedon-chip lens 51 is approximately hexagonal. With this, no gaps areformed between the normal pixels 30 and light-condensing elementstructures (on-chip lenses) of the phase-difference detection pixels 50.Thus, it becomes possible to increase the sensitivity of thephase-difference detection pixels 50.

<Third Configuration Example of Phase-Difference Detection Pixel inSolid-State Image Pickup Device to which Present Disclosure is Applied>

Next, a third configuration example of the phase-difference detectionpixel in the solid-state image pickup device to which the presentdisclosure is applied will be described. FIG. 8 is a schematic sectionalview of four adjacent pixels in the solid-state image pickup device towhich the present disclosure is applied. In the figure, two pixels atthe center are phase-difference detection pixels 60 as the thirdconfiguration example.

The phase-difference detection pixels 60 as the third configurationexample are obtained by replacing the shared on-chip lens 41 of thephase-difference detection pixels 40 as the first configuration example,by a shared on-chip lens 52 and dummy light-condensing elementstructures 53. That is, the third configuration example shown in FIG. 8has a configuration in which the two phase-difference detection pixels50 share the shared on-chip lens 52 and the dummy light-condensingelement structures 53.

FIG. 9 shows a top view of the shared on-chip lens 52 and the dummylight-condensing element structures 53, which cover the twophase-difference detection pixels 60, and the individual on-chip lenses31 of adjacent normal pixels 30.

The dummy light-condensing element structures 53 are formed between theshared on-chip lens 52 that covers the phase-difference detection pixels60 and the individual on-chip lenses 31 that cover the adjacent normalpixels 30. Due to the provision of the dummy light-condensing elementstructures 53, the individual on-chip lenses 31 and the shared on-chiplens 52 can be tessellated having substantially no gaps between theadjacent pixels. In addition, structure deformation thereof can beminimized and it is possible to realize a phase-difference detectionpixel in which optical color mixing is reduced.

<Relationship Between Position(s) of Dummy Light-Condensing ElementStructure(s) 53 in Phase-Difference Detection Pixels 60 as ThirdConfiguration Example and Amount of Correction of Pupil Correction>

Next, FIGS. 10 to 12 are diagrams for describing a relationship betweenposition(s) of the dummy light-condensing element structure(s) 53 in thephase-difference detection pixels 60 as the third configuration exampleshown in FIG. 8 and an amount of correction of pupil correction. Notethat A of each of the figures shows a top view of the shared on-chiplens 52 and the dummy light-condensing element structure(s) 53 and theindividual on-chip lenses 31 of the adjacent normal pixels 30, B of eachof the figures shows a cross-sectional view, and C of each of thefigures shows a relationship of device sensitivity to an angle ofincidence of incident light at each phase-difference detection pixel.

FIG. 10 shows a case where a center of a shared on-chip lens 52 thatcovers adjacent phase-difference detection pixels 60A and 60B is formedat a position shifted to the phase-difference detection pixel 60A and adummy light-condensing element structure 53 is formed between the sharedon-chip lens 52 and an individual on-chip lens 31 of a normal pixel 30adjacent to the phase-difference detection pixel 60B on the right-handside in the figure. In this case, with respect to light in aperpendicular direction (angle of incidence of 0), the phase-differencedetection pixel 60A has higher sensitivity than the phase-differencedetection pixel 60B. As a result, with respect to light at the angle ofincidence closer to the perpendicular direction, the phase-differencedetection pixel 60A has higher sensitivity. Thus, it is possible torealize a pair of phase-difference detection pixels (phase-differencedetection pixels 60A and 60B) having such an angle response that thephase-difference detection pixel 60B has relatively higher sensitivityto incident light from the left-hand side in the figure in an obliquedirection.

FIG. 11 shows a case where a center of a shared on-chip lens 52 thatcovers adjacent phase-difference detection pixels 60A and 60B is formedat a position made coinciding with a center of both the pixels and dummylight-condensing element structures 53 are formed between the sharedon-chip lens 52 and individual on-chip lenses 31 of normal pixels 30respectively adjacent to the phase-difference detection pixels 60A and60B. In this case, with respect to light in the perpendicular direction(angle of incidence of 0), the phase-difference detection pixels 60A and60B have equal sensitivity. As a result, with respect to light at theangle of incidence closer to the perpendicular direction, thephase-difference detection pixel 60A has higher sensitivity. Thus, withrespect to incident light in left and right oblique directions, it ispossible to realize a pair of phase-difference detection pixels(phase-difference detection pixels 60A and 60B) that has an angleresponse symmetric with respect to the angle of incidence of 0 that is areference.

FIG. 12 shows a case where a center of a shared on-chip lens 52 thatcovers adjacent phase-difference detection pixels 60A and 60B is formedat a position shifted to the phase-difference detection pixel 60B and adummy light-condensing element structure 53 is formed between the sharedon-chip lens 52 and an individual on-chip lens 31 of a normal pixel 30adjacent to the phase-difference detection pixel 60A on the left-handside in the figure. In this case, with respect to light in theperpendicular direction (angle of incidence of 0), the phase-differencedetection pixel 60B has higher sensitivity than the phase-differencedetection pixel 60A. As a result, with respect to light at the angle ofincidence closer to the perpendicular direction, the phase-differencedetection pixel 60B has higher sensitivity. Thus, it is possible torealize a pair of phase-difference detection pixels (phase-differencedetection pixels 60A and 60B) having such an angle response that thephase-difference detection pixel 60A has relatively higher sensitivityto incident light from the right-hand side in the figure in the obliquedirection.

By arranging the pair of phase-difference detection pixels shown inFIGS. 10 to 12 at the suitable positions in the solid-state image pickupdevice, it is possible to realize a solid-state image pickup device thatis also adaptable for a zoom lens having a wide CRA range and the like.

<Modified Example of Third Configuration Example of the Phase-DifferenceDetection Pixel in Solid-State Image Pickup Device to which PresentDisclosure is Applied>

Next, FIG. 13 shows modified examples of the phase-difference detectionpixels 60 as the third configuration example shown in B of FIG. 10 to Bof FIG. 12. Specifically, the shared on-chip lens 52 and the dummylight-condensing element structure(s) 53 that cover the phase-differencedetection pixels 60A and 60B are formed shifted so as to cover also theadjacent normal pixels 30 and the individual on-chip lenses 31 of theadjacent normal pixels 30 are also formed shifted correspondingly.

In the modified example of A of FIG. 13, the individual on-chip lenses31, the shared on-chip lens 52, and the dummy light-condensing elementstructure 53 are formed shifted to the right-hand side in the figurefrom the state shown in B of FIG. 10. In this case, an individualon-chip lens 31 of a normal pixel 30C is decentered to the right-handside and pupil correction thereof can be designed to be equivalent tothat of main light beams of a lens optical system. On the other hand,regarding the phase-difference detection pixels 60A and 60B, the dummylight-condensing element structure 53 is formed on the right-hand sidethereof, and hence a phase difference becomes 0 with respect to lightfrom the left-hand side relatively or outputs of the phase-differencedetection pixels 60A and 60B can be made equal.

In the modified example of B of FIG. 13, the individual on-chip lenses31, the shared on-chip lens 52, and the dummy light-condensing elementstructures 53 are formed shifted to the right-hand side in the figurefrom the state shown in B of FIG. 11. In this case, the individualon-chip lens 31 of the normal pixel 30C is decentered to the right-handside and pupil correction thereof can be designed to be equivalent tothat of main light beams of a lens optical system. On the other hand,regarding the phase-difference detection pixels 60A and 60B, the dummylight-condensing element structures 53 are formed equally on the left-and right-hand sides, and hence the outputs of the phase-differencedetection pixels 60A and 60B can be made equal at an angle equivalent toa direction of such an angle of incidence that the sensitivity becomesmaximum at the normal pixel 30C.

In the modified example of C of FIG. 13, the individual on-chip lenses31, the shared on-chip lens 52, and the dummy light-condensing elementstructure 53 are formed shifted to the right-hand side in the figurefrom the state shown in B of FIG. 12. In this case, the individualon-chip lens 31 of the normal pixel 30C is decentered to the right-handside and pupil correction thereof can be designed to be equivalent tothat of main light beams of a lens optical system. On the other hand,regarding the phase-difference detection pixels 60A and 60B, the dummylight-condensing element structure 53 is formed on the left-hand sidethereof, and hence the phase difference becomes 0 with respect to lightfrom the right-hand side relatively or the outputs of thephase-difference detection pixels 60A and 60B can be made equal.

As shown in FIG. 13, if the amount of correction of pupil correctionbetween the normal pixel 30 and the phase-difference detection pixel 60is designed to be a different level by changing the size, width, andarrangement of the dummy light-condensing element structure(s) 53,high-accurate phase-difference detection becomes possible even in thecase where a main-light beam angle largely varies in a manner thatdepends on a focal distance like an optical zoom lens, for example.

<Fourth Configuration Example of Phase-Difference Detection Pixel inSolid-State Image Pickup Device to which Present Disclosure is Applied>

Next, a fourth configuration example of the phase-difference detectionpixel in the solid-state image pickup device to which the presentdisclosure is applied will be described. FIG. 14 is a schematicperspective view extracting and showing a range of 16 (=4*4) pixels inthe solid-state image pickup device to which the present disclosure isapplied. Three pixels of them are phase-difference detection pixels 80as a fourth configuration example. Other 13 pixels are normal pixels 30.FIG. 15 is a schematic sectional view taken along A-A′ of FIG. 14. Inthe figure, the three pixels on the left-hand side are thephase-difference detection pixels 80.

The phase-difference detection pixels 80 include shared on-chip lenses81, a color filter layer 32, inter-pixel light-shielding structures 33,photoelectric converters 34, and a signal wiring layer 35 in order froman upper surface side (incident surface side).

FIG. 16 shows a top view of the shared on-chip lenses 81. As shown inthe figure, the shared on-chip lenses 81 are formed of two sharedon-chip lenses 81-1 and 81-2 to cover the three adjacentphase-difference detection pixels 80. That is, the fourth configurationexample shown in FIGS. 14 and 15 has a configuration in which the threephase-difference detection pixels 80 share the two shared on-chip lenses81-1 and 81-2.

Note that approximately a half of a pixel opening of a centralphase-difference detection pixel 80 of the three phase-differencedetection pixels 80 that share the two shared on-chip lenses 81-1 and81-2 is covered and shielded from light.

<Fifth Configuration Example of Phase-Difference Detection Pixel inSolid-State Image Pickup Device to which Present Disclosure is Applied>

Next, a fifth configuration example of the phase-difference detectionpixel in the solid-state image pickup device to which the presentdisclosure is applied will be described. FIG. 17 is a schematicsectional view of four adjacent pixels in the solid-state image pickupdevice to which the present disclosure is applied. In the figure, threepixels on the left-hand side are phase-difference detection pixels 60 asthe fifth configuration example.

Phase-difference detection pixels 90 as the fifth configuration exampleare obtained by replacing the shared on-chip lenses 81 of thephase-difference detection pixels 80 as the fourth configuration exampleby shared on-chip lenses 91. Like the shared on-chip lenses 81, theshared on-chip lenses 91 are formed of two shared on-chip lenses 91-1and 91-2 to cover the three adjacent phase-difference detection pixels90.

FIG. 18 shows a top view of the two shared on-chip lenses 91-1 and 91-2that cover the three phase-difference detection pixels 90 and individualon-chip lenses 31 of adjacent normal pixels 30.

In the case where the shared on-chip lenses 91 are formed using amanufacturing method similar to that of the individual on-chip lenses31, the individual on-chip lenses 31 are tessellated havingsubstantially no gaps between adjacent pixels and the shapes thereof areapproximately rectangular. On the other hand, the shape of the sharedon-chip lens 91 is approximately hexagonal. With this, no gaps areformed between the normal pixels 30 and light-condensing elementstructures (on-chip lenses) of the phase-difference detection pixels 50.Thus, it becomes possible to increase the sensitivity of thephase-difference detection pixels.

<Relationship of Device Sensitivity to Angle of Incidence of IncidentLight in Case where Three Adjacent Phase-Difference Detection Pixels areCovered with Two Shared On-Chip Lenses>

FIG. 19 is for describing a relationship of device sensitivity to anangle of incidence of incident light in the case where the threeadjacent phase-difference detection pixels are covered with the twoshared on-chip lenses.

In the upper part of the figure, angle-of-incidence dependency of thedevice sensitivity of a phase-difference detection pixel A of aconventional type having a pixel opening whose left half is shieldedfrom light and a phase-difference detection pixel B of the conventionaltype having a pixel opening whose right half is shielded from light isshown. The light-shielding is performed by using metal light-shieldingfilms. The phase-difference detection pixel A has higher sensitivity tolight at a positive incident angle. In contrast, the phase-differencedetection pixel B has higher sensitivity to light entering at a negativeangle. Phase-difference information used for AF is calculated on thebasis of a difference between signal levels of both.

In the middle part of the figure, angle-of-incidence dependency of thedevice sensitivity of two phase-difference detection pixels 40A and 40Bcovered with one shared on-chip lens 41 as the first configurationexample of the present disclosure. The phase-difference detection pixel40A has higher sensitivity to light at a positive incident angle. Incontrast, the phase-difference detection pixel 40B has highersensitivity to light from light entering at a negative angle. Note thatthe dotted lines of the graph correspond to the conventionalphase-difference detection pixels A and B shown in the upper part of thefigure for the sake of comparison. As shown in the figure, in thephase-difference detection pixels 40A and 40B as the first configurationexample, lowering of sensitivity due to light-shielding does not occur.Therefore, sensitivity higher than that of the conventional ones can beobtained at all incident angles.

In the lower part of the figure, angle-of-incidence dependency of thedevice sensitivity of three phase-difference detection pixels 80A, 80B,and 80C covered with the two shared on-chip lenses 81 as the fourthconfiguration example of the present disclosure and threephase-difference detection pixels 80D, 80E, and 80F covered with the twoshared on-chip lenses 81 is shown. It should be noted that thephase-difference detection pixel 80B has a pixel opening whose left halfis shielded from light and the phase-difference detection pixel 80E hasa pixel opening whose right half is shielded from light.

The phase-difference detection pixel 80A has higher sensitivity to lightat a positive incident angle. In contrast, the phase-differencedetection pixel 80C has higher sensitivity to light at a negativeincident angle. Further, the pixel opening of the phase-differencedetection pixel 80B is shielded from light from the center to theleft-hand side thereof. Therefore, the phase-difference detection pixel80B has relatively lower sensitivity. In addition, the phase-differencedetection pixel 80B has peak sensitivity to negative incidence largerthan that of the phase-difference detection pixel 80C.

The phase-difference detection pixel 80F has higher sensitivity to lightfrom a negative incident angle. In contrast, the phase-differencedetection pixel 80D has higher sensitivity to a positive incident angle.Further, the pixel opening of the phase-difference detection pixel 80Eis shielded from light from the center to the right-hand side thereof.Therefore, the phase-difference detection pixel 80E has relatively lowersensitivity. In addition, the phase-difference detection pixel 80E haspeak sensitivity to positive incidence larger than that of thephase-difference detection pixel 80D.

Phase-difference information used for image-surface phase difference AFis calculated on the basis of a difference between signal levels of theplurality of phase-difference detection pixels 80. A range of angles atwhich each of the phase-difference detection pixels 80 has peaksensitivity is widened, and hence a phase difference can be detectedwith respect to light of a wide main-light beam range.

<Variations of Pixel Array>

FIG. 20 shows an arrangement example of the phase-difference detectionpixels 40 in the solid-state image pickup device to which the presentdisclosure is applied. It should be noted that the figure extracts apixel range of 6*6, 36 pixels of the solid-state image pickup device andeach of R, G, and B of the figure represents the color of each pixel ofthe color filter layer 32. Note that the color arrangement of the colorfilter layer 32 in the normal pixels 30 other than the phase-differencedetection pixels 40 is based on the Bayer array in which 4 (=2*2) pixelsconstitute a single unit. Note that the arrangement of respective colorfilters of R, G, and B within the unit is not limited to the one shownin the figure and can be changed. Or, also the configuration of thecolors of the respective pixels of the color filter layer 32 is notlimited to R, G, and B and can be changed. The same applies to thefollowing figures.

In the arrangement example of the figure, the phase-difference detectionpixels 40 are arranged in an entire third row from the upper side of thefigure. The phase-difference detection pixels 40 of the same color (inthis case, G) are covered with the shared on-chip lenses 41 for everytwo pixels.

By setting all the pixels in the one row to be the phase-differencedetection pixels 40, both highly accurate, highly sensitivephase-difference detection and a high-resolution image due to the Bayerarray can be realized.

FIG. 21 shows an arrangement example in which the phase-differencedetection pixels 40 of the arrangement example of FIG. 20 are shifted byone column. It is favorable that the phase-difference detection pixels40 whose phases are shifted by a semi-phase are mixed in one solid-stateimage pickup device as in the arrangement example of FIG. 20 and thearrangement example of FIG. 21. FIG. 22 is obtained by further arrangingthe phase-difference detection pixels 40 also in all pixels of a fifthrow from the upper side of the figure, with respect to the arrangementexample of FIG. 20. FIG. 22 shows an arrangement example assuming FDaddition in 2*4-pixels. By employing an arrangement with which outputsignals of the phase-difference detection pixels of the same phase canbe added for the FD addition, it is possible to realize both of highlyaccurate, highly sensitive phase-difference detection and ahigh-resolution image due to the Bayer array.

FIG. 23 shows an arrangement example in which the phase-differencedetection pixels 40 are arranged in 4 (=2*2) pixels at a center of thefigure and the phase-difference detection pixels 40 of the same color(in this case, G) are covered with a shared on-chip lens 41 horizontallylong for every two pixels.

FIG. 24 shows an arrangement example in which the phase-differencedetection pixels 40 of the arrangement example of FIG. 23 are shifted byone column. It is favorable that the phase-difference detection pixels40 whose phases are shifted by a semi-phase are mixed in one solid-stateimage pickup device as in the arrangement example of FIG. 23 and thearrangement example of FIG. 24. FIG. 25 shows an arrangement example inwhich the phase-difference detection pixels 40 are arranged in 4 (=2*2)pixels at a center of the figure and the phase-difference detectionpixels 40 of the same color (in this case, G) are covered with sharedon-chip lenses 41 vertically long for every two pixels.

FIG. 26 shows an arrangement example in which the phase-differencedetection pixels 40 are arranged in 4 (=2*2) pixels at a center of thefigure and four phase-difference detection pixels 40 of the same color(in this case, G) are covered with one shared on-chip lens 41.

FIG. 27 shows an arrangement example in which the phase-differencedetection pixels 40 whose color arrangement is based on the Bayer arrayare arranged in 4 (=2*2) pixels at a center of the figure and thephase-difference detection pixels 40 of different colors (in this case,R and G, G and B) are covered with a shared on-chip lens 41 horizontallylong for every two pixels.

FIG. 28 shows an arrangement example in which the phase-differencedetection pixels 40 of the arrangement example of FIG. 27 are shifted byone column. Specifically, in this arrangement example, thephase-difference detection pixels 40 of different colors (in this case,G and R, B and G) are covered with a shared on-chip lens 41 horizontallylong for every two pixels. It is favorable that the phase-differencedetection pixels 40 whose phases are shifted by a semi-phase are mixedin one solid-state image pickup device as in the arrangement example ofFIG. 27 and the arrangement example of FIG. 28. FIG. 29 shows anarrangement example in which the phase-difference detection pixels 40whose color arrangement is based on the Bayer array are arranged in 8(=2*4) pixels at a center of the figure, the phase-difference detectionpixels 40 of different colors (in this case, G and B, R and G) arecovered with the shared on-chip lens 41 horizontally long for every twopixels, and FD addition in 2*4-pixels is assumed.

FIG. 30 shows an arrangement example in which the phase-differencedetection pixels 40 whose color arrangement is based on the Bayer arrayare arranged in 4 (=2*2) pixels at a center of the figure and thephase-difference detection pixels 40 of different colors (in this case,R and G, G and B) are covered with shared on-chip lenses 41 verticallylong for every two pixels.

FIG. 31 shows an arrangement example in which the phase-differencedetection pixels 40 whose color arrangement is based on the Bayer arrayare arranged in all pixels in a third row and a fourth row from theupper side of the figure and the phase-difference detection pixels 40 ofdifferent colors (in this case, R and G, G and B) are covered with ashared on-chip lens 41 horizontally long for every two pixels.

FIG. 32 shows an arrangement example in which the phases of thephase-difference detection pixels 40 of the arrangement example of FIG.31 are shifted by a semi-phase. It is favorable that thephase-difference detection pixels 40 whose phases are shifted by asemi-phase are mixed in one solid-state image pickup device as in thearrangement example of FIG. 31 and the arrangement example of FIG. 32.FIG. 33 shows an arrangement example in which the phase-differencedetection pixels 40 whose color arrangement is based on the Bayer arrayare arranged in all pixels in second to fifth rows from the upper sideof the figure, the phase-difference detection pixels 40 of differentcolors (in this case, G and B, R and G) are covered with a sharedon-chip lens 41 horizontally long for every two pixels, and FD additionof 2*4-pixels is assumed.

FIG. 34 shows arrangement examples of the phase-difference detectionpixels 40 in the solid-state image pickup device to which the presentdisclosure is applied. FIG. 34 extracts and shows 16 (=4*4) pixels or 24(=6*4) pixels of the solid-state image pickup device.

In the arrangement example of A of the figure, regarding thephase-difference detection pixels 40, two pixels having selectivesensitivity to G (covered with G-color filters) are covered with oneshared on-chip lens 41 and arranged in a checkerboard pattern in such amanner that they are not adjacent to each other in each row. Regardingthe normal pixels 30, two pixels having selective sensitivity to thesame color (covered with color filters of same color) are arrangedadjacent to each other in a row direction.

In the arrangement example of B of the figure, regarding thephase-difference detection pixels 40, two pixels having selectivesensitivity to G are covered with one shared on-chip lens 41 andarranged in a checkerboard pattern in such a manner that they are notadjacent to each other in each row. Regarding the normal pixels 30, theyare arranged in the order of R and B in an Nth row and they are arrangedin the order of B and R in an N+1th row.

In the arrangement example of C of the figure, regarding thephase-difference detection pixels 40, two pixels having selectivesensitivity to G are covered with one shared on-chip lens 41 andarranged in a checkerboard pattern in such a manner that they are notadjacent to each other in each row. Regarding the normal pixels 30, theyare arranged in the order of R and B in each row.

In the arrangement example of D of the figure, regarding thephase-difference detection pixels 40, two pixels having selectivesensitivity to G are covered with one shared on-chip lens 41 andarranged in a checkerboard pattern in such a manner that they are notadjacent to each other in each row. Regarding the normal pixels 30, Rand B are present in all rows and columns. The same color is constantlyarranged on both sides of two phase-difference detection pixels 40 thatis paired.

FIG. 35 shows arrangement examples of the phase-difference detectionpixels 40 in the solid-state image pickup device to which the presentdisclosure is applied. FIG. 35 extracts and shows 16 (=4*4) pixels ofthe solid-state image pickup device. In the arrangement examples shownin A of the figure to D of the figure, the phase-difference detectionpixels 40 having selective sensitivity to G are continuously arranged ina horizontal (row) strip form and phases thereof are common among allrows.

In the case of A of the figure, regarding the normal pixels 30, asviewed in the row direction, they are arranged in such a manner that thearrangement of R and B of each row is identical and the same colors arenot continuous.

In the case of B of the figure, regarding the normal pixels 30, asviewed in the row direction, they are arranged allowing the same colorsto be continuous.

In the case of C of the figure, regarding the normal pixels 30, asviewed in the row direction, they are arranged in such a manner that thearrangement of R and B of each row is different and the same colors arenot continuous.

In the case of D of the figure, the arrangement of the normal pixels isshifted from the arrangement example shown in B of the figure by onecolumn.

FIG. 36 shows arrangement examples of the phase-difference detectionpixels 40 in the solid-state image pickup device to which the presentdisclosure is applied. FIG. 36 extracts and shows 16 (=4*4) pixels ofthe solid-state image pickup device. In the arrangement examples shownin A of the figure to D of the figure, the phase-difference detectionpixels 40 having selective sensitivity to G are continuously arranged ina horizontal (row) strip form and arranged in such a manner that phasesthereof are shifted by a semi-phase in each row.

In the case of A of the figure, regarding the normal pixels 30, asviewed in the row direction, they are arranged in such a manner that thearrangement of R and B of each row is identical and the same colors arenot continuous.

In the case of B of the figure, regarding the normal pixels 30, asviewed in the row direction, they are arranged allowing the same colorsto be continuous.

In the case of C of the figure, regarding the normal pixels 30, asviewed in the row direction, they are arranged in such a manner that thearrangement of R and B of each row is different and the same colors arenot continuous.

In the case of D of the figure, the arrangement of the normal pixels isshifted from the arrangement example shown in B of the figure by onecolumn.

FIG. 37 shows arrangement examples of the phase-difference detectionpixels 40 in the solid-state image pickup device to which the presentdisclosure is applied. FIG. 37 extracts and shows 16 (=4*4) pixels ofthe solid-state image pickup device. It should be noted that, in thearrangement examples of the figure, the color of the color filter layerof the phase-difference detection pixels 40 is set to be R or B.

That is, in the arrangement example shown in A of the figure, thephase-difference detection pixels 40 having selective sensitivity to Rare continuously arranged in a horizontal stripe form and arranged insuch a manner that phases thereof are shifted by a semi-phase in eachrow. Regarding the normal pixels 30, as viewed in the row direction,they are arranged in such a manner that the arrangement of G and B ineach row is identical and the same colors are not continuous.

In the arrangement example shown in B of the figure, thephase-difference detection pixels 40 having selective sensitivity to Bare continuously arranged in a horizontal stripe form and arranged insuch a manner that phases thereof are shifted by a semi-phase in eachrow. Regarding the normal pixels 30, as viewed in the row direction,they are arranged in such a manner that the arrangement of R and G ineach row is identical and the same colors are not continuous.

As shown in the figure, the color of the color filter layer of thephase-difference detection pixels 40 is not limited to G and may be R orB. In this case, the sensitivity is approximately ½ in comparison with acase where the color of the color filters that cover thephase-difference detection pixels 40 is set to be G. However, the areaof the shared on-chip lens 41 that covers the phase-difference detectionpixels 40 is twice as large as that of the individual on-chip lens 31that covers the normal pixel 30. Therefore, outputs thereof are equaland the sensitivity ratio becomes favorable.

FIG. 38 is a modification of the configuration of the phase differencedetection images 40 of the arrangement example shown in A of FIG. 36. Aof the figure shows one obtained by dividing the region of the phasedifference detection images 40 corresponding to two pixels into tworegions unevenly (1:3). B of the figure shows one obtained by dividingthe region of the phase difference detection images 40 corresponding totwo pixels into three regions evenly for multiview. As shown in thefigure, if the region of the phase difference detection images 40corresponding to two pixels is suitably divided into a plurality ofregions at a ratio different from 1:1, improvement of an obliqueincidence characteristic can be achieved. Note that the modified exampleshown in FIG. 38 may be further modified and the color of the colorfilters that cover the phase-difference detection pixels 40 may be setto be R or B as shown in FIG. 37.

FIG. 39 shows arrangement examples of the phase-difference detectionpixels 40 in the solid-state image pickup device to which the presentdisclosure is applied. FIG. 39 extracts and shows 16 (=4*4) pixels ofthe solid-state image pickup device. In the arrangement examples shownin A of the figure to D of the figure, regarding the phase-differencedetection pixels 40, four pixels having selective sensitivity to G arecovered with one shared on-chip lens 41. Regarding the normal pixels 30,they have selective sensitivity to R or B and each of those pixels iscovered with the individual on-chip lens 31.

In the case of A of the figure, only the normal pixels 30 of R or onlythe normal pixels 30 of B are arranged in a 2*2-pixel region other thanthe phase-difference detection pixels 40 of G.

In the case of B of the figure, in the 2*2-pixel region other than thephase-difference detection pixels 40 of G, normal pixels 30 having thesame color of R or B are arranged adjacent to each other in a columndirection. It should be noted that the arrangement of the normal pixels30 of R and B in each 2*2-pixel region is different.

In the case of C of the figure, in the 2*2-pixel region other than thephase-difference detection pixels 40 of G, the same-color normal pixels30 of R or B are arranged adjacent to each other in the columndirection. It should be noted that the arrangement of the normal pixels30 of R and B in each 2*2-pixel region is common.

In the case of D of the figure, in the 2*2-pixel region other than thephase-difference detection pixels 40 of G, the same-color normal pixels30 of R or B are arranged adjacent to each other in the obliquedirection. It should be noted that the arrangement of the normal pixels30 of R and B in each 2*2-pixel region is common.

FIG. 40 shows arrangement examples of modified examples of thephase-difference detection pixels 40 in the solid-state image pickupdevice to which the present disclosure is applied. FIG. 40 extracts andshows 18 (=6*3) pixels of the solid-state image pickup device. In thismodified example, a pair of phase-difference detection pixels are formedhaving a size larger than the size of the normal pixel. The pair ofphase-difference detection pixels are arranged in a checkerboardpattern.

In the case of A of the figure, Gl and Gr having selective sensitivityto G are a pair of phase-difference detection pixels. Gl and Gr areformed having a size larger than the size of the normal pixel havingselective sensitivity to R or B.

In the case of B of the figure, Rl and Rr having selective sensitivityto R and Bl and Br having selective sensitivity to B are pairs ofphase-difference detection pixels. Rl and Rr or Bl and Br are formedhaving a size larger than the size of the normal pixel having selectivesensitivity to G.

<Regarding Problems in Case where Outputs of Phase-Difference DetectionPixels are Used as Color Signals>

By the way, for example, as in the arrangement example shown in FIG. 20and the like, in the case where, regarding a particular color (in thecase of FIG. 20, G), the normal pixels 30 and the phase-differencedetection pixels 40 are arranged on the solid-state image pickup device,color signals corresponding to the positions of the phase-differencedetection pixels 40 can be compensated for by using outputs of thenormal pixels 30 of the same color located in vicinity thereof.Therefore, it is only necessary to use the outputs of thephase-difference detection pixels 40 only for the purpose of calculatingphase detection signals.

However, for example, as in the arrangement example shown in FIG. 34 andthe like, in the case where all pixels of a particular color (in thecase of FIG. 34, G) are set to be the phase-difference detection pixels40, the normal pixels 30 of the same color are not present. Therefore,it is necessary to use the outputs of the phase-difference detectionpixels 40 not only for the purpose of calculating phase detectionsignals but also as color signals.

It should be noted that, in the case where the outputs of thephase-difference detection pixels 40 are also used as color signals, thenormal pixels 30 of colors (in the case of FIG. 34, R and B) differentfrom that particular color are different in shape from the on-chiplenses, and hence there is a difference in the oblique incidencecharacteristic and the following problem occurs. This problem will bedescribed with reference to FIG. 41.

A of FIG. 41 shows a case where a pair of phase-difference detectionpixels constituted of the phase-difference detection pixels 40 that aretwo pixels having the same color share the shared on-chip lens 41. Inthe figure, one of the pair of phase-difference detection pixels will bereferred to as a phase-difference detection pixel 401 (light) and theother will be referred to as a phase-difference detection pixel 40 r(right).

B of FIG. 41 shows an oblique incidence characteristic at CRA=0 deg ofthe phase-difference detection pixels 401 and 40 r. In the figure, thehorizontal axis indicates an angle of incidence and the vertical axisindicates sensitivity. Further, in B of FIG. 41, the curve l indicatesan oblique incidence characteristic of the phase-difference detectionpixel 401, the curve r indicates an oblique incidence characteristic ofthe phase-difference detection pixel 40 r, and the curve n indicates anoblique incidence characteristic of the normal pixel 30 different incolor from the phase-difference detection pixel 40. The curve l+r is oneobtained by adding the curve l with the curve r and the curve 2n is oneobtained by doubling the value of the curve n.

If the curve l+r representing the addition value of the phase-differencedetection pixel 401 and the phase-difference detection pixel 40 rcoincides with the curve 2n representing the double value of thesensitivity of the normal pixel 30, the oblique incidence characteristicof the phase-difference detection pixels 401 and 40 r would coincidewith the oblique incidence characteristic of the normal pixel 30.However, both do not coincide with each other as will be clear from B ofFIG. 41.

Regarding a solid-state image pickup device in which thephase-difference detection pixels 401 and 40 r is different in theoblique incidence characteristic from the normal pixel 30 as describedabove, no problems occur in the case where it is incorporated in afixed-focus camera employed in a smartphone or the like. However, in thecase where it is incorporated in an image pickup apparatus (single-lensreflex camera, compact camera, or the like) whose stop f-number andfocal distance f are variable, inconvenience that the sensitivity ratioof the phase-difference detection pixels 401 and 40 r and the normalpixels 30 changes and WB (white balance) is broken occurs.

In view of this, a configuration example of a phase-difference detectionpixel whose oblique incidence characteristic is made coinciding withthat of the normal pixel (fourth configuration example of thephase-difference detection pixel in the solid-state image pickup deviceto which the present disclosure is applied), by which the occurrence ofsuch inconvenience can be suppressed, will be described hereinafter.

<Fourth Configuration Example of Phase-Difference Detection Pixel inSolid-State Image Pickup Device to which Present Disclosure is Applied>

A of FIG. 42 shows the fourth configuration example of thephase-difference detection pixel. This phase-difference detection pixel100 is set to have a size corresponding to two pixels of the normalpixels 30. Regarding the photoelectric converter, the size correspondingto two pixels of the normal pixels 30 is divided into four regions atapproximately 0.5:0.5:0.5:0.5 in a horizontal direction and electriccharges generated by each of them can be individually output.Hereinafter, the phase-difference detection pixel 100 in which the sizecorresponding to two pixels of the normal pixels 30 is divided into fourregions will be referred to as a phase-difference detection pixel 100ll, a phase-difference detection pixel 100 ₁, a phase-differencedetection pixel 100 r, and a phase-difference detection pixel 100 rr inorder from the left-hand side in the figure. The phase-differencedetection pixels 100 ll to 100 rr are covered with one shared on-chiplens. The color of the color filter layer is common.

B of FIG. 42 shows oblique incidence characteristics of thephase-difference detection pixels 100 ll, 100 _(l), 100 r, and 100 rr atCRA=0 deg. In the figure, the horizontal axis indicates an angle ofincidence and the vertical axis indicates sensitivity. Further, in B ofFIG. 42, the curve ll indicates an oblique incidence characteristic ofthe phase-difference detection pixel 100 ll, the curve l indicates anoblique incidence characteristic of the phase-difference detection pixel100 _(l), the curve r indicates an oblique incidence characteristic ofthe phase-difference detection pixel 100 r, the curve rr indicates anoblique incidence characteristic of the phase-difference detection pixel100 rr, and the curve n indicates an oblique incidence characteristic ofthe normal pixel 30 different in color from the phase-differencedetection pixel 100. The curve l+r is one obtained by adding the curve lwith the curve r and the curve 2n is one obtained by doubling the valueof the curve n.

As will be clear from B of the figure, the curve 1+r representing theaddition value of the phase-difference detection pixel 100 _(l) and thephase-difference detection pixel 100 r approximately coincides with thecurve 2n representing the double value of the sensitivity of the normalpixel 30. Therefore, in the case of using the output of thephase-difference detection pixel 100 as a color signal, outputs of thephase-difference detection pixel 100 _(l) and the phase-differencedetection pixel 100 r are added and used. Regarding outputs of thephase-difference detection pixel 100 ll and the phase-differencedetection pixel 100 rr, they are used for calculation of phasedifference detection signals.

In the image pickup apparatus equipped with the solid-state image pickupdevice including the phase-difference detection pixels 100 and thenormal pixels 30, it becomes possible to suppress the occurrence of theinconvenience due to non-coincidence of the oblique incidencecharacteristics of both.

FIG. 43 is an arrangement example of the phase-difference detectionpixels 100 in the solid-state image pickup device to which the presentdisclosure is applied. FIG. 43 extracts and shows a region correspondingto 24 (=4*6) pixels of the normal pixels 30 from the solid-state imagepickup device. In the arrangement example of the figure, the color ofthe color filter layer of the phase-difference detection pixel 100 isset to be G. In each row, all pixels are set to be the phase-differencedetection pixels 100. The rows of the phase-difference detection pixels100 are arranged in such a manner that phases thereof are alternatelyshifted by a semi-phase.

By the way, if the outputs of the phase-difference detection pixel 100ll and the phase-difference detection pixel 100 rr are used only forcalculation of phase difference detection signals and not used as colorsignals, in a lens (lens having small f-number) having a wider obliqueincidence range, some signals are constantly collected to thephase-difference detection pixel 100 ll and the phase-differencedetection pixel 100 rr and sensitivity loss occurs. In view of this, theoutputs of the phase-difference detection pixel 100 ll and thephase-difference detection pixel 100 rr can also be used as colorsignals.

Specifically, a color signal 100G of a G-component corresponding to aposition of a phase-difference detection pixel 100 ₀ shown in A of FIG.43 is computed by using outputs of the phase-difference detection pixel100 ₀ and phase-difference detection pixels 100 _(l) to 100 ₆ of thesame color which surround it.

100G=100S(100B/100A)

Here, 100S, 100A, and 100B are as follows.

100S=100₀ ll+100₀ l+100₀ r+100₀ rr

100A=(z0(100₀ ll+100₀ l+100₀ r+100₀ rr)+z1(100₁ ll+100₁ l+100₁ r+100₁rr)+z2(100₂ ll+100₂ l+100₂ r+100₂ rr)+z3(100₃ ll+100₃ l+100₃ r+100₃rr)+z4(100₄ ll+100₄ l+100₄ r+100₄ rr)+z5(100₅ ll+100₅ l+100₅ r+100₅rr)+z6(100₆ ll+100₆ l+100₆ r+100₆ rr))/(z0+z1+z2+z3+z4+z5+z6)

100B=(z0(100₀ l+100₀ r)+z1(100₁ l+100₁ r)+z2(100₂ l+100₂ r)+z3(100₃l+100₃ r)+z4(100₄ l+100₄ r)+z5(100₅ l+100₅ r)+z6(100₆ l+100₆r))/(z0+z1+z2+z3+z4+z5+z6)

Note that z0 to z6 in 100A and 100B are predetermined coefficients. Forexample, they may be all 1. Weighting may be performed in a manner thatdepends on a spatial distance from the central pixel. Further fragmentedcoefficients may be set for four outputs ll, l, r, and rr of thephase-difference detection pixel 100. It is only necessary to set themconsidering the balance between the resolution and the SN ratio.

The color signal 100G calculated in this manner reduces the noise levelwhile the oblique incidence characteristic is made coinciding with thenormal pixel. Thus, the SN ratio of an image can be improved.

FIG. 44 is another arrangement example of the phase-difference detectionpixels 100 in the solid-state image pickup device to which the presentdisclosure is applied. FIG. 44 extracts and shows a region correspondingto 18 (=6*3) pixels of the normal pixels 30 from the solid-state imagepickup device. In the arrangement example of the figure, the color ofthe color filter layer of the phase-difference detection pixel 100 isset to be B or R. The normal pixels 30 of the two pixels of G, thephase-difference detection pixels 100 ll to 100 rr of B, and thephase-difference detection pixels 100 ll to 100 rr of R are arranged inaccordance with the Bayer array.

FIG. 45 is still another arrangement example of the phase-differencedetection pixels 100 in the solid-state image pickup device to which thepresent disclosure is applied. FIG. 45 extracts and shows a regioncorresponding to 16 (=4*4) pixels of the normal pixels 30 from thesolid-state image pickup device. In the arrangement example of thefigure, the color of the color filter layer of the phase-differencedetection pixel 100 is set to be B or R. In each row, all pixels are setto be the phase-difference detection pixels 100. The rows of thephase-difference detection pixels 100 are arranged in such a manner thatphases thereof are alternately shifted by a semi-phase. In each row ofthe phase-difference detection pixels 100, the phase-differencedetection pixels 100 ll to 100 rr of B and the phase-differencedetection pixels 100 ll to 100 rr of R are alternately arranged.

Note that the color and arrangement of the phase-difference detectionpixels 100 in the solid-state image pickup device are not limited tothose of the above-mentioned arrangement example.

<Fifth Configuration Example of Phase-Difference Detection Pixel inSolid-State Image Pickup Device to which Present Disclosure is Applied>

A of FIG. 46 shows the fifth configuration example of thephase-difference detection pixel. This phase-difference detection pixel110 is set to have a size corresponding to two pixels of the normalpixels 30. Regarding the photoelectric converter, the size correspondingto two pixels of the normal pixels 30 is divided into three regions atapproximately 0.5:1:0.5 in the horizontal direction and electric chargesgenerated by each of them can be individually output. Hereinafter, thephase-difference detection pixel 110 obtained by dividing the sizecorresponding to two pixels of the normal pixels 30 into three regionswill be referred to as a phase-difference detection pixel 110 l, aphase-difference detection pixel 110 c, and a phase-difference detectionpixel 110 r in order from the left-hand side in the figure. Thephase-difference detection pixels 110 l, 110 c, and 110 r are coveredwith one shared on-chip lens. The color of the color filter layer iscommon.

B of FIG. 46 shows oblique incidence characteristics of thephase-difference detection pixels 110 l, 110 c, and 110 r at CRA=0 deg.In the figure, the horizontal axis indicates an angle of incidence andthe vertical axis indicates sensitivity. Further, in B of FIG. 46, thecurve l indicates an oblique incidence characteristic of thephase-difference detection pixel 110 l, the curve c indicates an obliqueincidence characteristic of the phase-difference detection pixel 110 c,the curve r indicates an oblique incidence characteristic of thephase-difference detection pixel 110 r, and the curve n indicates anoblique incidence characteristic of the normal pixel 30 different incolor from the phase-difference detection pixel 110. The curve 2n is oneobtained by doubling the value of the curve n.

As will be clear from B of the figure, the curve c indicating thesensitivity of the phase-difference detection pixel 110 c approximatelycoincides with the curve 2n representing the double value of thesensitivity of the normal pixel 30. Therefore, in the case of using theoutput of the phase-difference detection pixel 110 as a color signal, anoutput of the phase-difference detection pixel 110 c is used. Regardingoutputs of the phase-difference detection pixel 110 l and thephase-difference detection pixel 110 r, they are used for calculation ofphase difference detection signals.

In the image pickup apparatus equipped with the solid-state image pickupdevice including the phase-difference detection pixels 110 and thenormal pixels 30, it becomes possible to suppress the occurrence of theinconvenience due to non-coincidence of the oblique incidencecharacteristics of both.

FIG. 47 is an arrangement example of the phase-difference detectionpixels 110 in the solid-state image pickup device to which the presentdisclosure is applied. FIG. 47 extracts and shows a region correspondingto 24 (=4*6) pixels of the normal pixels 30 from the solid-state imagepickup device. In the arrangement example of the figure, the color ofthe color filter layer of the phase-difference detection pixels 110 isset to be G. In each row, all pixels are set to be the phase-differencedetection pixels 110. The rows of the phase-difference detection pixels110 are arranged in such a manner that phases thereof are alternatelyshifted by a semi-phase.

By the way, if the outputs of the phase-difference detection pixel 110 land the phase-difference detection pixel 110 r are only used forcalculation of phase difference detection signals and not used as colorsignals, in a lens (lens having small f-number) having a wider obliqueincidence range, some signals are constantly collected to thephase-difference detection pixel 110 l and the phase-differencedetection pixel 110 r and sensitivity loss occurs. In view of this, theoutputs of the phase-difference detection pixel 110 l and thephase-difference detection pixel 110 r can also be used as colorsignals.

Specifically, the color signal 100G of a G-component corresponding to aposition of a phase-difference detection pixel 110 ₀ shown in A of FIG.47 is computed by using outputs of the phase-difference detection pixel110 ₀ and phase-difference detection pixels 110 ₁ to 110 ₆ of the samecolor which surround it.

110G=110S(110B/110A)

Here, 110S, 110A, and 110B are as follows.

110S=110₀ l+110₀ l+110₀ r

110A=(z0(110₀ l+110₀ c+110₀ r)+z1(110₁ l+110₁ c+110₁ r)+z2(110₂ l+110₂c+110₂ r)+z3(110₃ l+110₃ c+110₃ r)+z4(110₄ l+110₄ c+110₄ r)+z5(110₅l+110₅ c+110₅ r)+z6(110₆ l+110₆ c+110₆ r))/(z0+z1+z2+z3+z4+z5+z6)

110B=(z0(110₀ l+110₀ r)+z1(110₁ l+110₁ r)+z2(110₂ l+110₂ r)+z3(110₃l+110₃ r)+z4(110₄ l+110₄ r)+z5(110₅ l+110₅ r)+z6(110₆ l+110₆r))/(z0+z1+z2+z3+z4+z5+z6)

Note that z0 to z6 in 110A and 110B are predetermined coefficients. Forexample, they may be all 1. Weighting may be performed in a manner thatdepends on a spatial distance from the central pixel. Further fragmentedcoefficients may be set for three outputs 1, c, and r of thephase-difference detection pixel 110. It is only necessary to set themconsidering the balance between the resolution and the SN ratio.

The color signal 110G calculated in this manner reduces the noise levelwhile the oblique incidence characteristic is made coinciding with thenormal pixel. Thus, the SN ratio of an image can be improved.

Note that the color and arrangement of the phase-difference detectionpixels 110 in the solid-state image pickup device are not limited tothose of the above-mentioned arrangement example. For example, color andarrangement similar to those of FIGS. 43 to 45 are applicable.

<Sixth Configuration Example of Phase-Difference Detection Pixel inSolid-State Image Pickup Device to which Present Disclosure is Applied>

FIG. 48 shows a sixth configuration example of the phase-differencedetection pixel and an arrangement example thereof in the solid-stateimage pickup device. This phase-difference detection pixel 120 is set tohave a size four times as large as that of the normal pixel 30.Regarding the photoelectric converter, the size corresponding to fourpixels of the normal pixels 30 is divided into four regions atapproximately 0.5:0.5:0.5:0.5 in the each of the vertical and horizontaldirections and electric charges generated by each of them can beindividually output. The phase-difference detection pixel 120 is coveredwith one shared on-chip lens. The color of the color filter layer of therespective divided regions is common. Further, in the arrangementexample of the figure, regarding the phase-difference detection pixels120, the color of the color filter layer is set to be G. In thesolid-state image pickup device, the phase-difference detection pixels120 of G and the normal pixels 30 of B or R are arranged in accordancewith the Bayer array.

Note that, although the illustration is omitted, the oblique incidencecharacteristic of the phase-difference detection pixel 120 is similar tothat of B of FIG. 42. Therefore, in the case of using the output of thephase-difference detection pixel 120 as a color signal, outputs of fourblocks at a center of 16 divided blocks of the phase-differencedetection pixel 120 are used. Outputs of other blocks are used only forcalculation of phase difference detection signals and not used as colorsignals.

FIG. 49 shows an arrangement example of the phase-difference detectionpixels 120 in the solid-state image pickup device. In the arrangementexample of the figure, regarding the phase-difference detection pixels120, the color of the color filter layer is set to be B or R. In thesolid-state image pickup device, the phase-difference detection pixels120 of B or R and the normal pixels 30 of G are arranged in accordancewith the Bayer array.

Note that the color and arrangement of the phase-difference detectionpixels 120 in the solid-state image pickup device are not limited tothose of the above-mentioned arrangement example.

In the image pickup apparatus equipped with the solid-state image pickupdevice including the phase-difference detection pixels 120 and thenormal pixels 30, it becomes possible to suppress the occurrence of theinconvenience due to non-coincidence of the oblique incidencecharacteristics of both.

<Seventh Configuration Example of Phase-Difference Detection Pixel inSolid-State Image Pickup Device to which Present Disclosure is Applied>

FIG. 50 shows a seventh configuration example of the phase-differencedetection pixel and an arrangement example thereof in the solid-stateimage pickup device. This phase-difference detection pixel 130 is set tohave a size four times as large as that of the normal pixel 30.Regarding the photoelectric converter, the size corresponding to fourpixels of the normal pixels 30 is divided into three regions atapproximately 0.5:1:0.5 in the each of the vertical and horizontaldirections and electric charges generated by each of them can beindividually output. The phase-difference detection pixel 130 is coveredwith one shared on-chip lens. The color of the color filter layer of therespective divided regions is common. Further, in the arrangementexample of the figure, regarding the phase-difference detection pixels130, the color of the color filter layer is set to be G. In thesolid-state image pickup device, the phase-difference detection pixels130 of G and the normal pixels 30 of B or R are arranged in accordancewith the Bayer array.

Note that, although the illustration is omitted, the oblique incidencecharacteristic of the phase-difference detection pixel 130 is similar tothat of B of FIG. 46. Therefore, in the case of using the output of thephase-difference detection pixel 130 as a color signal, an output of oneblock at a center of 9 divided blocks of the phase-difference detectionpixel 120 is used. Outputs of other blocks are used only for calculationof phase difference detection signals and not used as color signals.

FIG. 51 shows an arrangement example of the phase-difference detectionpixels 130 in the solid-state image pickup device. In the arrangementexample of the figure, regarding the phase-difference detection pixels130, the color of the color filter layer is set to be B or R. In thesolid-state image pickup device, the phase-difference detection pixels130 of B or R and the normal pixels 30 of G are arranged in accordancewith the Bayer array.

Note that the color and arrangement of the phase-difference detectionpixels 130 in the solid-state image pickup device are not limited tothose of the above-mentioned arrangement example.

In the image pickup apparatus equipped with the solid-state image pickupdevice including the phase-difference detection pixels 130 and thenormal pixels 30, it becomes possible to suppress the occurrence of theinconvenience due to non-coincidence of the oblique incidencecharacteristics of both.

<Usage Example of Solid-State Image Pickup Device to which PresentDisclosure is Applied>

FIG. 52 is a diagram showing a usage example that uses theabove-mentioned solid-state image pickup device.

The solid-state image pickup device can be used in various cases ofsensing light such as visible light, infrared light, ultraviolet light,and X-rays as follows.

-   -   An apparatus for photographing images to be viewed, such as a        digital camera and a camera-equipped mobile apparatus    -   An apparatus used for traffic purposes, such as a car-mounted        camera that photographs front/rear/periphery/inside of an        automobile, a surveillance camera that monitors running vehicles        and roads, and a distance measurement sensor that measures        distances among vehicles, for safe driving including automatic        stop, recognition of a driver's state, and the like    -   An apparatus used in home electronics such as a TV, a        refrigerator, and an air conditioner, for photographing gestures        of users and executing apparatus operations according to the        gestures    -   An apparatus used for medical and healthcare purposes, such as        an endoscope and an apparatus that performs blood vessel        photographing by receiving infrared light    -   An apparatus used for security purposes, such as a surveillance        camera for crime-prevention purposes and a camera for person        authentication purposes    -   An apparatus used for beauty care purposes, such as a skin        measurement apparatus that photographs skins and a microscope        that photographs scalps    -   An apparatus used for sports purposes, such as an action camera        and a wearable camera for sports purposes    -   An apparatus for agriculture purposes, such as a camera for        monitoring a state of fields and crops

Embodiments of the present disclosure are not limited to theabove-mentioned embodiments and various changes can be made withoutdeparting from the gist of the present disclosure.

The present disclosure can also take the following configurations.

(1)

A solid-state image pickup device in which a normal pixel that generatesa pixel signal of an image and a phase-difference detection pixel thatgenerates a pixel signal used in calculation of a phase-differencesignal for controlling an image-surface phase difference AF function arearranged in a mixed manner, in which

in the phase-difference detection pixel, a shared on-chip lens forcondensing incident light to a photoelectric converter that generates apixel signal used in calculation of the phase-difference signal isformed for every plurality of adjacent phase-difference detectionpixels.

(2)

The solid-state image pickup device according to (1), in which

in the normal pixel, an individual on-chip lens for condensing incidentlight to a photoelectric converter that generates a pixel signal of theimage is formed for each normal pixel.

(3)

The solid-state image pickup device according to (1) or (2),

an inter-pixel light-shielding structure is provided between the normalpixel and the normal pixel and between the normal pixel and thephase-difference detection pixel.

(4)

The solid-state image pickup device according to any of (1) to (3), inwhich

an inter-pixel light-shielding structure is also provided between thephase-difference detection pixel and the phase-difference detectionpixel.

(5)

The solid-state image pickup device according to any of (1) to (4), inwhich

the phase-difference detection pixel includes an opening light-shieldingstructure that limits an opening of the photoelectric converter.

(6)

The solid-state image pickup device according to any of (1) to (5), inwhich

in the phase-difference detection pixel, the shared on-chip lens isformed for every two adjacent pixels.

(7)

The solid-state image pickup device according to any of (1) to (5), inwhich

in the phase-difference detection pixel, two shared on-chip lenses areformed for every three adjacent pixels.

(8)

The solid-state image pickup device according to any of (1) to (7), inwhich

a boundary between the individual on-chip lens formed in the normalpixel and the shared on-chip lens formed in the phase-differencedetection pixel is approximately rectangular or approximately hexagonal.

(9)

The solid-state image pickup device according to any of (1) to (6), inwhich

a dummy light-condensing element structure is formed between theindividual on-chip lens formed in the normal pixel and the sharedon-chip lens formed in the plurality of adjacent phase-differencedetection pixels.

(10)

The solid-state image pickup device according to (9), in which

the dummy light-condensing element structure is formed non-symmetricallywith respect to the plurality of phase-difference detection pixels thatshare the shared on-chip lens.

(11)

The solid-state image pickup device according to any of (1) to (10), inwhich

the plurality of phase-difference detection pixels that share the sharedon-chip lens are arranged in a checkerboard pattern.

(12)

The solid-state image pickup device according to any of (1) to (10), inwhich

the phase-difference detection pixel is linearly arranged in at leasteither one of a row direction and a column direction.

(13)

The solid-state image pickup device according to any of (1) to (10), inwhich

the phase-difference detection pixel is arranged in a stripe pattern inat least either one of a row direction and a column direction.

(14)

The solid-state image pickup device according to (13), in which

the phase-difference detection pixels arranged in stripes adjacent toeach other in the stripe form have phases shifted from each other.

(15)

The solid-state image pickup device according to any of (1) to (14), inwhich

a color filter having selective sensitivity to three or more kinds ofdifferent wavelengths is provided for each pixel, and

the plurality of phase-difference detection pixels that share the sharedon-chip lens include the color filter having selective sensitivity to asame wavelength.

(16)

The solid-state image pickup device according to any of (1) to (14), inwhich

a color filter having selective sensitivity to three or more kinds ofdifferent wavelengths is provided for pixel, and

the plurality of phase-difference detection pixels that share the sharedon-chip lens include the color filter having selective sensitivity todifferent wavelengths.

(17)

The solid-state image pickup device according to any of (1) to (16), inwhich

the phase-difference detection pixel has a pixel size larger than thatof the normal pixel.

(18)

The solid-state image pickup device according to any of (1) to (15), inwhich

all pixels including a color filter having selective sensitivity to aparticular wavelength of three or more kinds of different wavelengthsare the phase-difference detection pixels, and

an output of the phase-difference detection pixel are also used as apixel signal of an image.

(19)

The solid-state image pickup device according to (18), in which

the phase-difference detection pixel that shares the shared on-chip lenshas a size that is an integer multiple of that of the normal pixel,

the photoelectric converter of the phase-difference detection pixel isdivided into a plurality of regions including a central region fromwhich a same oblique incidence characteristic as a photoelectricconverter of the normal pixel is obtained, and

an output of the central region is also used as a pixel signal of animage.

(20)

The solid-state image pickup device according to (19), in which

the phase-difference detection pixel that shares the shared on-chip lenshas a size that is twice as large as that of the normal pixel,

the photoelectric converter of the phase-difference detection pixel isdivided into three regions at approximately 0.5:1:0.5, and

an output of the region corresponding to 1 of the ratio is also used asa pixel signal of an image.

(21)

The solid-state image pickup device according to (19), in which

the phase-difference detection pixel that shares the shared on-chip lenshas a size that is twice as large as that of the normal pixel,

the photoelectric converter of the phase-difference detection pixel isdivided into four regions at approximately 0.5:0.5:0.5:0.5, and

an addition value of outputs of the regions respectively correspondingto 0.5 and 0.5 at a center of the ratio is also used as a pixel signalof an image.

(22)

An electronic apparatus, including

a solid-state image pickup device in which a normal pixel that generatesa pixel signal of an image and a phase-difference detection pixel thatgenerates a pixel signal used in calculation of a phase-differencesignal for controlling an image-surface phase difference AF function arearranged in a mixed manner, in which

in the phase-difference detection pixel, a shared on-chip lens forcondensing incident light to a photoelectric converter that generates apixel signal used in calculation of the phase-difference signal isformed for every plurality of adjacent phase-difference detectionpixels.

REFERENCE SIGNS LIST

-   30 normal pixel,-   31 individual on-chip lens,-   32 color filter layer,-   33 inter-pixel light-shielding structure,-   34 photoelectric converter,-   35 signal wiring layer,-   40 phase-difference phase-difference detection pixel,-   51, 52 shared on-chip lens,-   53 dummy light-condensing element structure,-   60, 80, 90, 100, 110, 120, 130 phase-difference detection pixel

1. An imaging device comprising: a semiconductor substrate comprisingfirst to third photoelectric conversion regions, the first to thirdphotoelectric conversion regions being disposed along a width directionof the semiconductor substrate, the first photoelectric conversionregion being disposed adjacent to the second photoelectric conversionregion, and the second photoelectric conversion region being disposedadjacent to the third photoelectric conversion region; a first on-chiplens disposed above the first photoelectric conversion region; a secondon-chip lens disposed above the second and third photoelectricconversion regions; and a first color filter disposed above the first tothird photoelectric conversion regions and below the first on-chip lensand the second on-chip lens.
 2. The imaging device according to claim 1,wherein the first to third photoelectric conversion regions areconfigured to receive light transmitted through the first color filter.3. The imaging device according to claim 1, wherein the first on-chiplens is configured to focus incident light on the first photoelectricconversion region and the second on-chip lens is configured to focusincident light on the second and third photoelectric conversion regions.4. The imaging device according to claim 1, wherein the first colorfilter bandpasses green light.
 5. The imaging device according to claim1, wherein the first photoelectric conversion region has the same sizewith one of the second and third photoelectric conversion regions. 6.The imaging device according to claim 1, wherein the first on-chip lenshas a different size from the second on-chip lens.
 7. The imaging deviceaccording to claim 6, wherein the first on-chip lens is smaller than thesecond on-chip lens.
 8. The imaging device according to claim 1, whereina phase difference is configured to be detected by outputs from thesecond photoelectric conversion region and the third photoelectricconversion region.
 9. The imaging device according to claim 1, wherein afirst separation region is disposed between the first photoelectricconversion region and the second photoelectric conversion region andwherein a second separation region is disposed between the secondphotoelectric conversion region and the third photoelectric conversionregion.
 10. The imaging device according to claim 9, wherein a lightshield is disposed above the first separation region.
 11. The imagingdevice according to claim 9, wherein a light shield is not disposedabove the second separation region.
 12. The imaging device according toclaim 1, further comprising a wiring layer disposed below thesemiconductor substrate.
 13. A camera-equipped mobile apparatuscomprising the imaging device according to claim
 1. 14. An imagingdevice comprising: a semiconductor substrate comprising first to thirdphotoelectric conversion regions, the first to third photoelectricconversion regions being disposed along a first line, the firstphotoelectric conversion region being disposed adjacent to the secondphotoelectric conversion region, and the second photoelectric conversionregion being disposed adjacent to the third photoelectric conversionregion; a first on-chip lens disposed above the first photoelectricconversion region; a second on-chip lens disposed above the second andthird photoelectric conversion regions; a first color filter disposedabove the first photoelectric conversion region and below the firston-chip lens; and a second color filter disposed above the second andthird photoelectric conversion regions and below the second on-chiplens.
 15. The imaging device according to claim 14, wherein the firstphotoelectric conversion region is configured to receive lighttransmitted through the first color filter and the second and thirdphotoelectric conversion regions are configured to receive lighttransmitted through the second color filter.
 16. The imaging deviceaccording to claim 14, wherein the first on-chip lens is configured tofocus incident light on the first photoelectric conversion region andthe second on-chip lens is configured to focus incident light on thesecond and third photoelectric conversion regions.
 17. The imagingdevice according to claim 14, wherein the first color filter and thesecond color filter bandpass green light.
 18. The imaging deviceaccording to claim 14, wherein the first photoelectric conversion regionhas the same size with one of the second and third photoelectricconversion regions.
 19. The imaging device according to claim 14,wherein the first on-chip lens has a different size from the secondon-chip lens.
 20. The imaging device according to claim 19, wherein thefirst on-chip lens is smaller than the second on-chip lens.
 21. Theimaging device according to claim 14, wherein a phase difference isconfigured to be detected by outputs from the second photoelectricconversion region and the third photoelectric conversion region.
 22. Theimaging device according to claim 14, wherein a first separation regionis disposed between the first photoelectric conversion region and thesecond photoelectric conversion region and wherein a second separationregion is disposed between the second photoelectric conversion regionand the third photoelectric conversion region.
 23. The imaging deviceaccording to claim 22, wherein a light shield is disposed above thefirst separation region.
 24. The imaging device according to claim 22,wherein a light shield is not disposed above the second separationregion.
 25. The imaging device according to claim 14, further comprisinga wiring layer disposed below the semiconductor substrate.
 26. Acamera-equipped mobile apparatus comprising the imaging device accordingto claim
 14. 27. An imaging device comprising: a semiconductor substratecomprising first to third photoelectric conversion regions, the first tothird photoelectric conversion regions being disposed along a firstline, the first photoelectric conversion region being disposed adjacentto the second photoelectric conversion region, and the secondphotoelectric conversion region being disposed adjacent to the thirdphotoelectric conversion region; a first on-chip lens disposed above thefirst photoelectric conversion region; and a second on-chip lensdisposed above the second and third photoelectric conversion regions,wherein the first to third photoelectric conversion regions areconfigured to receive light filtered to a first spectrum.
 28. Theimaging device according to claim 27, wherein the first to thirdphotoelectric conversion regions are configured to receive green light.29. The imaging device according to claim 27, wherein the first on-chiplens is configured to focus incident light on the first photoelectricconversion region and the second on-chip lens is configured to focusincident light on the second and third photoelectric conversion regions.30. The imaging device according to claim 27, wherein the firstphotoelectric conversion region has the same size with one of the secondand third photoelectric conversion regions.
 31. The imaging deviceaccording to claim 27, wherein the first on-chip lens has a differentsize from the second on-chip lens.
 32. The imaging device according toclaim 31, wherein the first on-chip lens is smaller than the secondon-chip lens.
 33. The imaging device according to claim 27, wherein aphase difference is configured to be detected by outputs from the secondphotoelectric conversion region and the third photoelectric conversionregion.
 34. The imaging device according to claim 27, wherein a firstseparation region is disposed between the first photoelectric conversionregion and the second photoelectric conversion region and wherein asecond separation region is disposed between the second photoelectricconversion region and the third photoelectric conversion region.
 35. Theimaging device according to claim 34, wherein a light shield is disposedabove the first separation region.
 36. The imaging device according toclaim 34, wherein a light shield is not disposed above the secondseparation region.
 37. The imaging device according to claim 27, furthercomprising a wiring layer disposed below the semiconductor substrate.38. A camera-equipped mobile apparatus comprising the imaging deviceaccording to claim 27.